IRF540N 2-3V Vgs N – Channel Mosfet
The IRF540N N-Channel MOSFET is a power MOSFET for high-efficiency switching applications. It offers much lower on-resistance than bipolar transistors, making it ideal for PWM motor control, power switching, and high-current load driving.
Key Features
- N-Channel power MOSFET
- Low RDS(on) (~0.077Ω)
- 33A continuous drain current
- 100V drain-source voltage
- TO-220 package
- High efficiency switching
- Fast switching speed
Technical Specifications
| Parameter |
Specification |
| Type |
N-Channel MOSFET |
| Max VDS |
100V |
| Max ID |
33A |
| RDS(on) |
0.077Ω @ VGS=10V |
| VGS(th) |
2-4V |
| Package |
TO-220 |
| Power Dissipation |
130W (with heatsink) |
| Input Capacitance |
~1700pF |
Applications
- PWM motor control
- High-current switching
- Power LED driving
- DC-DC converters
- Load switching
- Inverter circuits
Important Notes
- Logic-level gate drive may need pull-down resistor
- Gate capacitance requires driver for high-frequency PWM
- Heatsink needed for high continuous current
- Add flyback diode for inductive loads
- Switch fully on or off – avoid linear region for efficiency
- Verify gate threshold voltage for your drive voltage