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Home / Transistors & IC / IRF540N 2-3V Vgs N – Channel Mosfet
IRF540N 2-3V Vgs N - Channel Mosfet

The IRF540N N-Channel MOSFET is a power MOSFET for high-efficiency switching applications.

IRF540N 2-3V Vgs N – Channel Mosfet

SKU 13012 Category Transistors & IC

₹29.00 (Excl GST)

excl. GST*

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Quantity Discount Discounted price
10 - 29 2.5% ₹28.28
30 - 69 5% ₹27.55
70 - 100 7.5% ₹26.83

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IRF540N 2-3V Vgs N – Channel Mosfet

The IRF540N N-Channel MOSFET is a power MOSFET for high-efficiency switching applications. It offers much lower on-resistance than bipolar transistors, making it ideal for PWM motor control, power switching, and high-current load driving.


Key Features

  • N-Channel power MOSFET
  • Low RDS(on) (~0.077Ω)
  • 33A continuous drain current
  • 100V drain-source voltage
  • TO-220 package
  • High efficiency switching
  • Fast switching speed

Technical Specifications

Parameter Specification
Type N-Channel MOSFET
Max VDS 100V
Max ID 33A
RDS(on) 0.077Ω @ VGS=10V
VGS(th) 2-4V
Package TO-220
Power Dissipation 130W (with heatsink)
Input Capacitance ~1700pF

Applications

  • PWM motor control
  • High-current switching
  • Power LED driving
  • DC-DC converters
  • Load switching
  • Inverter circuits

Important Notes

  • Logic-level gate drive may need pull-down resistor
  • Gate capacitance requires driver for high-frequency PWM
  • Heatsink needed for high continuous current
  • Add flyback diode for inductive loads
  • Switch fully on or off – avoid linear region for efficiency
  • Verify gate threshold voltage for your drive voltage

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